Memory technologies:
Future memory technology
IBM announces 3 bits/cell PCM
New angle for optical memories
The future of storage: hardware
Battery and memory device in one
DNA shows promise of storage devices
Data storage in DNA becomes a reality
Storage approach mimics DNA in fossils
Hybrid memory cube angles for exascale
The switch that could double USB memory
Makng steps toward improved data storage
Knowm snaps in final piece of memistor puzzle
Towards data storage at the single molecule level
Patent granted for super-fast MRAM data storage
Commodity memory for a high performance world
UK Researchers develop super-fast memory chip
New technology of ultrahigh density optical storage
SMCs: observations on capacity and response time
New 3D chip combines computing and data storage
Tantalizing discovery may boost memory technology
Scientists stored an Amazon gift card on some DNA
Solid state quantum memories set endurance record
3D Xpoint memory: faster-than-flash storage unveiled
Small tilt in magnets makes them viable memory chips
Write speeds for phase-change memory reach record limits
T-rays will 'speed up' computer memory by a factor of 1,000
DNA storage crams 700 terabytes of data into a single gram
Rice, UCLA slash energy needs for next-generation memory
Memristive accelerators for dense and sparse linear algebra
New computer memory can hold data 20 years without power
Milestone could help magnets end era of computer transistors
A single-atom magnet breaks new ground for future data storage
IBM scientists demonstrate phase-change memory breakthrough
Micron exposes the double life of memory with Automata processor
5D 'superman memory crystal' heralds unlimited lifetime data storage
Memory-processing units (MPU) could bring memristors to the masses
Industry leaders join forces to promote new high performance interconnect
Samsung demonstrates the world's first MRAM based in-memory computing
Leading memory systems researcher receives top computer architecture award
Next generation photonic memory devices are 'light-written', ultrafast and energy efficient
Samsung now mass producing industry's first 2nd generation, 10-nanometer class DRAM
Room-temperature operation of low-voltage, non-volatile, compound semiconductor memory cells